Image sensor
US7482646B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2006 |
| Grant date | Jan 27, 2009 |
| Priority date | — |
| Expiry date | May 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
An image sensor including a substrate having a plurality of semiconductor devices formed thereon, an interconnection layer disposed on the substrate, and a plurality of isolated photo-diodes embedded in the interconnection layer is provided. The isolated photo-diodes are located above the semiconductor devices and electrically connected to the semiconductor devices through the interconnection layer. In the above-mentioned image sensor, thickness of the interconnection layer is not limited so as to facilitate fabrication of the SOC CMOS image sensor. In addition, the image sensor is advantageous in relatively high fill-factor, layout area saving and easy being implanted. Furthermore, a method for fabricating the image mentioned above is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.