Semiconductor devices with electric current detecting structure
US7482659B2 · kind B2 · utility
4Cited by
3References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 6, 2006 |
| Grant date | Jan 27, 2009 |
| Priority date | — |
| Expiry date | Dec 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0036
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided with a main electrode of main switching elements region, a sensor electrode of sensor switching elements region, and a protective device formed between the main electrode and the sensor electrode. The protective device electrically connects the main electrode and the sensor electrode when a predetermined potential difference is produced between the main electrode and the sensor electrode. The semiconductor device can handle excessive voltage such as ESD generated between the sensor electrode and the gate electrode while simultaneously preventing gate drive loss from increasing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.