Compositions for preparing low dielectric materials
US7482676B2 · kind B2 · utility
0Cited by
10References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2006 |
| Grant date | Jan 27, 2009 |
| Priority date | — |
| Expiry date | Jul 11, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02216
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Low dielectric materials and films comprising same have been identified for improved performance when used as performance materials, for example, in interlevel dielectrics integrated circuits as well as methods for making same. In one aspect of the present invention, the performance of the dielectric material may be improved by controlling the weight percentage of ethylene oxide groups in the at least one porogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.