Method for manufacturing vertical group III-nitride light emitting device
US7485482B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2006 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Aug 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/872
Abstract
The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlxGayIn(1-x-y)N layer, an active layer and a p-doped AlmGanIn(1-m-n)N layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlmGanIn(1-m-n)N layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlxGayIn(1-x-y)N layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.