Method for fabricating a MESFET
US7485514B2 · kind B2 · utility
2Cited by
31References
17Claims
0Family size
Inventor
Key dates
| Filing date | Jan 5, 2006 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Apr 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/114
Abstract
A MESFET and method for fabricating a MESFET are provided. The method includes forming an n-type channel portion in a substrate and forming a p-type channel portion in the substrate. A boundary of the n-type channel portion and a boundary of the p-type channel portion define an intrinsic region in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.