Method of manufacturing semiconductor device
US7485575B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2005 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Feb 4, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76838
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate is inserted into a heat treatment apparatus at a low temperature ranging from room temperature to about 50° C., and organic substances included in a metal on the semiconductor substrate are released without carbonization in an annealing process before CMP. Further, organic substances capable of preventing the corrosion of the metal are decomposed, and the organic substances themselves and chlorine, sulfuric acid, and ammonia which are included in the organic substances are diffused out of the metal film by setting the heat treatment apparatus at a rate of temperature rise of 15° C./min or less until a prescribed heat treatment temperature is reached.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.