Nitride-based light-emitting device having grid cell layer
US7485897B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 11, 2005 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Mar 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.