Nitride semiconductor device and a manufacturing method therefor
US7485900B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2005 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Dec 22, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/831
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a nitride semiconductor device wherein on a substrate having a first main surface and a second main surface, a nitride semiconductor layer is formed on the first main surface and an electrode is formed on the second main surface, wherein the substrate comprises dislocation concentration regions, and on the dislocation concentration regions on the second main surface of the substrate, the electrode having at least an opening region is formed, and the edge surface of the substrate has a region roughly matching the edge surface of the electrode formed on the dislocation concentration regions. With the present invention, device separation can be stabilized and a nitride semiconductor device is provided having good ohmic contact between a nitride semiconductor layer and electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.