Semiconductor device and method having capacitor and capacitor insulating film that includes preset metal element
US7485915B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2006 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | May 5, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/924
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a capacitor which includes a capacitor insulating film at least including a first insulating film and a ferroelectric film formed in contact with the first insulating film, containing a compound of a preset metal element and a constituent element of the first insulating film as a main component and having a dielectric constant larger than that of the first insulating film, a first capacitor electrode formed of one of Cu and a material containing Cu as a main component, and a second capacitor electrode formed to sandwich the capacitor insulating film in cooperation with the first capacitor electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.