Semiconductor device and method for manufacturing the same
US7485918B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2007 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | May 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
A semiconductor device including a gate dielectric film provided on at least one site on a surface of a semiconductor substrate, at least one first gate electrode provided on the gate dielectric film, an inter-electrode dielectric film provided while covering a surface of the first gate electrode, at least partial film thickness of a portion covering a portion other than a corner portion that does not come into contact with the gate dielectric film from among a plurality of corner portions of the first gate electrode being formed to be smaller than at least partial film thickness of a portion covering the corner portion that does not come into contact with the gate dielectric film, and a second gate electrode provided while covering a surface of the inter-electrode dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.