Nonvolatile storage device and method of manufacturing the same, and storage device and method of manufacturing the same
US7486553B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2006 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Sep 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile storage device includes a plurality of bit lines 21 arranged in a column direction on a substrate; a plurality of word lines 35 arranged in a row direction on the substrate; a memory cell array 20 having a plurality of memory cells 31, where a store state of each of the memory cells 31 changes according to an electric signal relatively applied to the word line 35 and the bit line 21; a word line selection unit having a needle 51 relatively movable with respect to the substrate which comes into contact with one word line 35, setting the word line 35 in contact with the needle 51 to a selection state; and a sense amplifier 48 detecting through the bit line an electrical signal exhibiting the store state of the memory cell 31 to be connected to the word line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.