Flash memory device having reduced program time and related programming method
US7486570B2 · kind B2 · utility
0Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2005 |
| Grant date | Feb 3, 2009 |
| Priority date | — |
| Expiry date | Aug 5, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a program method for a flash memory device which includes; storing data in a buffer memory and generating a high voltage as a word line voltage. When transmission of data to the buffer memory is complete, the program method simultaneously transfers data in the buffer memory to a page buffer circuit, and programs data in the page buffer circuit in a memory cell array according to the word line voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.