Micro-heater and sensor
US7487675B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2006 |
| Grant date | Feb 10, 2009 |
| Priority date | — |
| Expiry date | Nov 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B2203/017
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A micro-heater including a semiconductor substrate having a cavity; an insulating layer provided on an upper side of the semiconductor substrate and closing the cavity; and a heater element embedded in a portion of the insulating layer above the cavity and including a metallic material. The insulating layer includes: a compressive stress film made of silicon oxide; and a tensile stress film made of silicon nitride. The tensile stress film has a thickness not less than that of the compressive stress film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.