Patent · US Active

Direct pyrolysis route to GaN quantum dots

US7488384B2 · kind B2 · utility

4Cited by

2References

16Claims

0Family size

Assignee

Ohio University · US

Inventors

Paul Gregory Van Patten · Athens, US
Guiquan Pan · Danbury, US

Key dates

Filing date	May 3, 2006
Grant date	Feb 10, 2009
Priority date	—
Expiry date	Nov 14, 2026

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/406
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Colloidal nanocrystals or “quantum dots” of GaN are directly produced by heating amidogallium dimer, i.e., (Ga2[N(CH3)2]6), in the presence of a functional amine. The GaN quantum dots obtained, which comprise isolated particles 2-3 nm in diameter with a relative broad size distribution (e.g., 20% standard deviation) exhibit strong exciton confinement.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.