Providing a charge dissipation structure for an electrostatically driven device
US7488614B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 25, 2005 |
| Grant date | Feb 10, 2009 |
| Priority date | — |
| Expiry date | Apr 19, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G5/019
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In one embodiment, an electrode is disposed on a surface of a first portion of the dielectric, with the first portion and the electrode forming an electrode region of the device. A charge-dissipation structure is then formed by implanting ions into the electrode region and a second portion of the dielectric located outside of the electrode region. In another embodiment, a charge-dissipation structure is formed by implanting ions into the dielectric of a movable part of an electro-mechanical system. Advantageously, ion implantation can be performed without masking, lithography, or elevated temperatures; the electrical properties of the resulting charge dissipation structure can be controlled relatively easily; and portions of the charge dissipation structure are protected from oxidation and/or corrosion by the dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.