Thin film transistor substrate for display device and fabricating method thereof
US7488632B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2007 |
| Grant date | Feb 10, 2009 |
| Priority date | — |
| Expiry date | Aug 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor (TFT) substrate is fabricated in three mask processes. In a first mask process, a gate line and a gate electrode are formed. In a second mask process, a data line, a source electrode, a drain electrode, a semiconductor layer, and a first upper storage electrode overlapping the gate line are formed from a gate insulating film, undoped and doped amorphous silicon layers, and a data metal layer. In a third mask process, a pixel hole is formed through protective and gate insulating films within and outside a pixel area, the first upper storage electrode is partially removed, a pixel electrode contacts a side of the drain electrode within the pixel hole at the pixel area, and a second upper storage electrode contacts a side of the first upper storage electrode in the pixel hole outside the pixel area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.