Semiconductor device and method for implantation of doping agents in a channel
US7488653B2 · kind B2 · utility
3Cited by
14References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2007 |
| Grant date | Feb 10, 2009 |
| Priority date | — |
| Expiry date | Apr 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate of a first type of conductivity provided with at least one gate on one of its faces, and at least two doped regions of a second type of conductivity for forming a drain region and a source region. The two doped regions are arranged in the substrate flush with the face of the substrate on each side of a region of the substrate located under the gate for forming a channel between the drain and source regions. At least one region of doping agents of the second type of conductivity is implanted only in the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.