Semiconductor article and method for manufacturing with reduced base resistance
US7488663B2 · kind B2 · utility
0Cited by
12References
30Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 4, 2005 |
| Grant date | Feb 10, 2009 |
| Priority date | — |
| Expiry date | Nov 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/177
Abstract
A method for manufacturing a semiconductor article and a semiconductor article is provided, wherein a base region of a first semiconductor material is applied, a silicide layer is applied above the base region, after the application of the silicide layer, an opening is created in the silicide layer by removing the silicide layer within the area of the opening, and after this, an emitter region is formed within the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.