Chemical vapor deposited film based on a plasma CVD method and method of forming the film
US7488683B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2004 |
| Grant date | Feb 10, 2009 |
| Priority date | — |
| Expiry date | Dec 5, 2024 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB05D2490/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a chemical plasma by feeding an organosilicon compound and an oxidizing gas into the treating chamber, wherein the rate of feeding the oxidizing gas is varied while maintaining constant the rate of feeding the organosilicon compound gas into the plasma-treating chamber during the formation of the vapor deposited film. A chemical vapor deposited film is formed featuring excellent adhesiveness, softness, flexibility, oxygen-barrier property and water-barrier property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.