Methods of forming silicon nitride layers using nitrogenous compositions
US7488694B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 2005 |
| Grant date | Feb 10, 2009 |
| Priority date | — |
| Expiry date | Dec 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides nitrogenous compositions for forming a silicon nitride layer, wherein the nitrogenous composition comprises a hydrazine compound, an amine compound or a mixture thereof. The present invention further provides source compositions for forming a silicon nitride layer, wherein the source composition comprises a nitrogenous composition comprising a hydrazine compound, an amine compound or a mixture thereof, and a silicon source comprising hexachlorodisilane. Methods for forming silicon nitride layers are further provided. The silicon nitride layers provided herein may be formed on a substrate at a low temperature and may further exhibit improved breakdown voltage and an enhanced etch resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.