Systems, methods and apparatus for correction of field-effect transistor leakage in a digital X-ray detector
US7488947B1 · kind B1 · utility
3Cited by
1References
23Claims
0Family size
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Key dates
| Filing date | Aug 8, 2007 |
| Grant date | Feb 10, 2009 |
| Priority date | — |
| Expiry date | Aug 8, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T7/005
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
Systems, methods and apparatus are provided through which in some embodiments field-effect-transistor (FET) leakage is estimated recursively from a pixel value obtained when the FET is off. The corrected pixel value is then obtained by subtracting the FET leakage estimate from the pixel value read when the FET is on. A weighing factor is introduced for the FET leakage estimation to achieve the balance between image noise and correction resolution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.