Semiconductor device
US7488970B2 · kind B2 · utility
0Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2006 |
| Grant date | Feb 10, 2009 |
| Priority date | — |
| Expiry date | Oct 31, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The semiconductor device according to the present invention includes a semiconductor layer containing plural band gap change thin films in which a band gap is continuously monotonously changed in a laminating direction. Therefore, the present invention provides a semiconductor device having high reliability and low electric resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.