TMOS-infrared uncooled sensor and focal plane array

US7489024B2 · kind B2 · utility

Assignee

• Technion Research & Development Foundation Limited · IL

Inventors

• Eran Socher · Nes Ziona, IL
• Oflr Bochobza-Degani · Ashkelon, IL
• Yael Nemirovsky · Haifa, IL

Key dates

• Filing date: Feb 15, 2004
• Grant date: Feb 10, 2009
• Expiry date: May 4, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

An array of uncooled infrared sensors based on a micro-machined temperature sensitive MOS transistor. The sensor array is fabricated using a commercial CMOS process on SOI wafers, followed by backside silicon dry etching for each sensor pixel. Active sensor pixels may include either, an integrator and buffer, or simply the sensing transistor, serving also as the selection device. The transistor bias controls the selected device and the sensitivity of the sensor. PMOS transistors and switched operation are used for noise minimization.