Millimeter-wave cascode amplifier gain boosting technique
US7489201B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2007 |
| Grant date | Feb 10, 2009 |
| Priority date | — |
| Expiry date | Jul 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/387
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Disclosed is a gain boosting technique for use with millimeter-wave cascode amplifiers. The exemplary technique may be implemented using a 0.18 μm SiGe process (FT=140 GHz). It has also been shown that the technique is effective for CMOS processes with comparable FT. An exemplary gain-enhanced cascode stage was measured to have higher than 9 dB gain with a 1-dB bandwidth above 6 GHz with a DC power consumption of 13 mW. In addition, one cascode stage without gain boosting may be cascaded with two gain-boosted cascode amplifier stages to implement a three-stage LNA. The measured stable gain is higher than 24 dB at 60 GHz with a 3-dB bandwidth of 3.1 GHz for 25 mW of DC power consumption. It is believed that this is the first 60 GHz LNA with a higher than 20 dB gain using a 0.18 μm SiGe process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.