Photoresist compositions and methods of forming a pattern using the same
US7491484B2 · kind B2 · utility
2Cited by
1References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 10, 2007 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Oct 10, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/123
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a photoresist composition and a method of forming a pattern using the same, the photoresist composition includes about 0.1 to about 0.5 percent by weight of a photoacid generator including a positively charged sulfonium ion and a negatively charged sulfonate ion having a hydrophilic carboxylic group, about 4 to about 10 percent by weight of a resin, and a solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.