Creating high voltage FETs with low voltage process
US7491595B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 6, 2005 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Jan 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
An integrated circuit (IC) includes a high voltage first-conductivity type field effect transistor (HV-first-conductivity FET) and a high voltage second-type field effect transistor (HV-second-conductivity FET). The HV first-conductivity FET has a second-conductivity-well and a field oxide formed over the second-conductivity-well to define an active area. A first-conductivity-well is formed in at least a portion of the active area, wherein the first-conductivity-well is formed to have the capability to operate as a first-conductivity-drift portion of the HV-first-conductivity FET. The HV second-conductivity FET has a first-conductivity-well and a field oxide formed over the first-conductivity-well to define an active area. A channel stop region is formed in at least a portion of the active area, wherein the channel stop region is formed to have the capability to operate as second-conductivity-drift portions of the HV-second-conductivity FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.