Method of manufacturing a semiconductor device and semiconductor obtained by means of such a method
US7491639B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2003 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Jan 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1026
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to the manufacture of a semiconductor device (10) with a semiconductor body (1) and a substrate (2) and comprising at least one semiconductor element (3), which semiconductor device is equipped with at least one connection region (4) and a superjacent strip-shaped connection conductor (5) which is connected to the connection region, which connection region and connection conductor are both recessed in a dielectric, and a dielectric region (6) of a first material is provided on the semiconductor body (1) at the location of the connection region (4) to be formed, after which the dielectric region (6) is coated with a dielectric layer (7) of a second material that differs from the first material, which dielectric layer is provided, at the location of the strip-shaped connection conductor (5) to be formed, with a strip-shaped recess (7A) which overlaps the dielectric region (6) and extends up to said dielectric region, and after the formation of the recess (7A) and the removal of the dielectric region (6), connection region (4) is formed by depositing an electroconductive material in the space (6A) created by the removal of the dielectric region (6), and the conne…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.