Photodetector comprising a monolithically integrated transimpedance amplifier and evaluation electronics, and production method

US7491925B2 · kind B2 · utility

Assignees

• X-FAB SEMICONDUCTOR FOUNDRIES GMBH · DE
• MELEXIS NV · BE

Inventors

• Konrad Bach · Tiefthal, DE
• Alexander Hoelke · Sebauh, MY
• Uwe Eckoldt · Hohenfelden, DE
• Wolfgang Einbrodt · Eisenach, DE
• Karl-Ulrich Stahl · Erfurt, DE

Key dates

• Filing date: Dec 6, 2004
• Grant date: Feb 17, 2009
• Expiry date: Dec 6, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/95

Abstract

The aim of the invention is to configure a photodetector (10) such that no disadvantages are created for processing low luminous intensities on detectors known in prior art, especially when monolithically integrating the evaluation electronics. Said aim is achieved by a photodetector for processing low luminous intensities, comprising a monolithically integrated transimpedance amplifier and monolithically integrated evaluation electronics. An actual photocell component (20) is assigned to the chip face onto which the light preferably falls. Electronic circuit components (30) are arranged on the opposite chip face. Electrical connections (40) between the photocell and the electronic circuit are provided with an extension in the direction running perpendicular to the chip normal.