Non-magnetic semiconductor spin transistor
US7492022B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2005 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Jun 12, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/935
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in (110)-oriented quantum wells.The nonmagnetic semiconductor device may also be used as a nonmagnetic semiconductor spin valve and a magnetic field sensor. The spin transistor and spin valve may be applied to low-power and/or high-density and/or high-speed logic technologies. The magnetic field sensor may be applied to high-speed hard disk read heads.The spin RTD of the present invention would be useful for a plurality of semiconductor spintronic devices for spin injection and/or spin detection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.