Semiconductor device and method of manufacturing the same
US7492035B2 · kind B2 · utility
5Cited by
1References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 4, 2006 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Aug 27, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/159
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a semiconductor substrate and a high-resistance first conductivity type well region disposed on the semiconductor substrate. A low-resistance second conductivity type source region and a low-resistance second conductivity type drain region are formed in the well region. The well region is formed with trenches having convex and concave portions and that are disposed parallel to a source-drain direction of the source and drain regions. A gate insulating film is disposed on surfaces of the convex and concave portions of the trenches. A gate electrode is disposed on the gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.