Method and device for demultiplexing a crossbar non-volatile memory
US7492624B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2007 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Jun 30, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and device demultiplex a crossbar non-volatile memory that includes a first array of row nano-wires and a second array of column nano-wires, which cross the row nano-wires at a plurality of cross-points, hosting plural memory cells. A first electrode and a second electrode respectively cross a modulated doping portion of the row nano-wires and a modulated doping portion of the column nano-wires. A first contact and a second contact respectively the row nano-wires and the column nano-wires. The first electrode and the second electrode are biased respectively with a first and a second adjustable voltage value that progressively switch one by one said memory cells from the OFF state to the ON state, and this state can be memorized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.