Non-volatile semiconductor memory device
US7492641B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2006 |
| Grant date | Feb 17, 2009 |
| Priority date | — |
| Expiry date | Mar 11, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile semiconductor memory device includes a memory cell array and a sense amplifier, the device being internally controlled to execute a write sequence with write pulse applications and write-verify operations repeated for writing a set of memory cells selected in the memory cell array, wherein the sense amplifier performs a write speed verify operation for detecting write speed of plural memory cells to be written into a certain data state after a certain write pulse application at the beginning of the write sequence, thereby getting discriminating data for classifying the plural memory cells into first and second cell groups, and after the write speed verify operation, the first and second cell groups are alternately written on different write conditions from each other with reference to the discriminating data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.