Method for forming a cantilever and tip
US7494593B1 · kind B1 · utility
5Cited by
16References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2004 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Oct 18, 2024 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2201/07
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method is disclosed for forming a single crystal cantilever and tip on a substrate. The method can include the operation of defining an implant area on the substrate with a layer of photoresist. A further operation can be implanting oxygen into the substrate in the implant area to a predetermined depth to form a buried oxide layer. The buried oxide layer can define a bottom of the single crystal cantilever and tip. Another operation can involve shaping the single crystal cantilever and tip from the substrate above the buried oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.