Cyclodextrin derivative, photoresist composition including the cyclodextrin derivative and method of forming a pattern using the photoresist composition
US7494761B2 · kind B2 · utility
0Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2007 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Sep 11, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/112
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist film is formed on an object layer of a semiconductor device by coating the object layer with a photoresist composition including about 7 percent to about 14 percent by weight of a cyclodextrin derivative, about 0.1 percent to about 0.5 percent by weight of a photoacid generator, and a remainder of an organic solvent. The cyclodextrin derivative includes a β-cyclodextrin moiety and at least one alkyl carbonate group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.