Semiconductor laser with a weakly coupled grating
US7494836B2 · kind B2 · utility
1Cited by
19References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2006 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Mar 30, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/22
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.