Silicon solar cell and production method thereof
US7495167B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2004 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Apr 30, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
It is an object of the present invention to provide a silicon solar cell with n+pp+ BSF structure using solar grade silicon substrate, having a life time close to the initial level of the substrate.The solar cell of the present invention is produced by a back side boron diffusion step for diffusing boron on a back side of the substrate, a front side phosphorus diffusion step for diffusing phosphorus on a front side of the substrate, a low-temperature annealing step for annealing the substrate at 600° C. or lower for 1 hour or more, and an electrode firing step carried out at a peak temperature of 700° C. or lower for 1 minute or less, carried out in this order.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.