Semiconductor device and manufacturing method of the same
US7495268B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2007 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Jul 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/47
Abstract
A semiconductor device according to the present invention includes: a semiconductor substrate; a channel layer formed on the semiconductor substrate; a donor layer formed on the channel layer; a first Schottky layer formed on the donor layer; a second Schottky layer formed on the first Schottky layer; a first gate electrode formed on the first Schottky layer to form a Schottky barrier junction with the first Schottky layer; a first source electrode and a first drain electrode formed so as to sandwich the first gate electrode and electrically connected to the channel layer; a second gate electrode formed on the second Schottky layer and made of a material different from the first gate electrode to form a Schottky barrier junction with the second Schottky layer; and a second source electrode and a second drain electrode formed so as to sandwich the second gate electrode and electrically connected to the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.