Relay-connected semiconductor transistors
US7495952B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2006 |
| Grant date | Feb 24, 2009 |
| Priority date | — |
| Expiry date | Dec 31, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/943
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A solid-state semiconductor device operable without loss arising from junction-to junction (e.g., source-to-drain) leakage current includes a movable MEMS switch or relay armature structure carrying at least one electrical contact corresponding to a semiconductor device junction. The switch or relay armature is movable from a first position corresponding to a first switch state to a second position corresponding to a second switch state. The semiconductor device also includes an actuation circuit configured to act on the cantilever switch, changing the switch from a first contact-conducting state to a second non-contact-conducting state by physically separating the switch's electrical contact from the semiconductor device junction, thus eliminating the conductive path for leakage current losses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.