Ternary nitride-based buffer layer of a nitride-based light-emitting device and a method for manufacturing the same
US7497905B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2004 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | Jul 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ternary nitride-based buffer layer of a nitride-based light-emitting device and related manufacturing method. The device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a ternary nitride-based buffer layer, a first conductivity type nitride-based semiconductor layer, a light-emitting layer, and a second conductivity type nitride-based semiconductor layer. The manufacturing method includes introducing a first reaction source containing a first group III element into a chamber at a first temperature that is subsequently deposited on the surface of the substrate, the melting point of said element being lower than the first temperature. Introducing a second reaction source containing a second group III element and a third reaction source containing a nitrogen element into the chamber at a second temperature, no lower than the melting point of the first group III element, for forming a ternary nitride-based buffer layer with the first group III element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.