Process for forming a feature by undercutting a printed mask
US7498119B2 · kind B2 · utility
5Cited by
12References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2006 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | Apr 13, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/133516
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A print patterned mask is formed a digital lithographic process on the surface of a photoresist or similar material layer. The print patterned mask is then used as a development or etching mask, and the underlying layer overdeveloped or overetched to undercut the print patterned mask. The mask may be removed and the underlying structure used an etch mask or as a final structure. Fine feature widths, narrower the minimum width of the print patterned mask features, may be obtained while realizing the benefits of digital lithography in the manufacturing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.