Method of manufacturing an ultraviolet light emitting AlGaN composition and ultraviolet light emitting device containing same
US7498182B1 · kind B1 · utility
51Cited by
1References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2006 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | Sep 12, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3209
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An AlGaN composition is provided comprising a group III-Nitride active region layer, for use in an active region of a UV light emitting device, wherein light-generation occurs through radiative recombination of carriers in nanometer scale size, compositionally inhomogeneous regions having band-gap energy less than the surrounding material. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition above is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.