Fabrication of conductive micro traces using a deform and selective removal process
US7498183B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 18, 2007 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | May 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/0528
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In a method of forming micro traces, stamping techniques are employed to define a target pattern of the micro traces. The stamping is applied to electrically conductive material and may be limited to pressure, but a thermal stamping approach may be utilized. Following the stamping, a portion of the conductive material is removed, leaving the target pattern of conductive micro traces. In the pressure-application step, the pressure or the combination of pressure and temperature is sufficient to at least weaken the integrity of the bulk conductive material along the area of contact. Typically, this step causes shearing of the conductive material. Following the pressure-application step, excess conductive material is removed. In some embodiments of the invention, the thickness of the micro traces is not determined in a single step. The original thickness may be formed using a “seed” material. The subsequent material buildup may occur after the target pattern is established.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.