Epi-structure with uneven multi-quantum well and the method thereof
US7498607B2 · kind B2 · utility
5Cited by
7References
24Claims
0Family size
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Key dates
| Filing date | May 16, 2007 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | Oct 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with Multi-Quantum Well (MQW); and a second semiconductor conductive layer forming on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven Multi-Quantum Well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.