High-voltage power semiconductor device
US7498633B2 · kind B2 · utility
22Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2006 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | Jan 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A semiconductor device, such as a metal-oxide semiconductor field-effect transistor, includes a semiconductor substrate, a drift layer formed on the substrate, a first and a second source region, and a JFET region defined between the first and the second source regions. The JFET region may have a short width and/or a higher concentration of impurities than the drift layer. The semiconductor device may also include a current spreading layer formed on the drift layer. The current spreading layer may also have a higher concentration of impurities than the drift layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.