Patent · US Active

Integrated BiCMOS semiconductor circuit

US7498639B2 · kind B2 · utility

1Cited by

3References

4Claims

0Family size

Assignee

TEXAS INSTRUMENTS INCORPORATED · US

Inventors

Philipp Steinmann · Richardson, US
Scott Balster · Dallas, US
Badih El-Kareh · Colchester, US
Thomas Scharnagl · Perchtoldsdorf, AT
Michael Schmitt · Freising, DE

Key dates

Filing date	Sep 23, 2005
Grant date	Mar 3, 2009
Priority date	—
Expiry date	Sep 2, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH10D89/10
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated BiCMOS semiconductor circuit has active moat areas in silicon. The active moat areas include electrically active components of the semiconductor circuit, which comprise active window structures for base and/or emitter windows. The integrated BiCMOS semiconductor circuit has zones where silicon is left to form dummy moat areas which do not include electrically active components, and has isolation trenches to separate the active moat areas from each other and from the dummy moat areas. The dummy moat areas comprise dummy window structures having geometrical dimensions and shapes similar to those of the active window structures for the base and/or emitter windows.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.