Extreme ultraviolet (EUV) detectors based upon aluminum nitride (ALN) wide bandgap semiconductors

US7498645B2 · kind B2 · utility

Assignee

• III-N Technology, Inc. · US

Inventors

• Jing Li · Manhattan, US
• Zhaoyang Fan · La Puente, US
• Jingyu Lin · Lubbock, US
• Hongxing Jiang · Lubbock, US

Key dates

• Filing date: Oct 4, 2007
• Grant date: Mar 3, 2009
• Expiry date: Oct 4, 2027

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Disclosed are detector devices and related methods. In an AlN EUV detector a low temperature AlN layer is deposed above an AlN buffer layer. In one embodiment, the low temperature AlN layer is deposed at about 800° C. Pulsed NH3 is used when growing an AlN epilayer above the low temperature layer. Numerous embodiments are disclosed.