Piezoelectric thin film resonator and devices provided with the same
US7498904B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2006 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | May 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/023
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A piezoelectric thin film resonator includes a substrate in which a cavity is formed, a first electrode having a first electrode edge and partly spanning the cavity on the substrate; a piezoelectric layer placed on the first electrode, a second electrode having a second electrode edge and placed on the piezoelectric layer, a resonator unit constituted by an overlapping part of the first electrode, the piezoelectric layer, the second electrode, and the cavity; and a second lead wiring which is integral with the second electrode, extends to the substrate where the cavity is not present, and has a width larger than a part of a peripheral length of the cavity to which the second electrode edge extends. In the piezoelectric thin film resonator, a first length defined by the periphery of the first electrode of the resonator unit is larger than a second length defined by the second electrode edge of the resonator unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.