Integrated circuit memory system with high speed non-volatile memory data transfer capability
US7499322B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2007 |
| Grant date | Mar 3, 2009 |
| Priority date | — |
| Expiry date | Aug 28, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated circuit memory system includes an integrated circuit device having a random access memory array, a non-volatile memory array (e.g., flash memory array) and a data transfer circuit therein. The memory arrays and data transfer circuit may be included in a common integrated circuit chip. The random access memory (RAM) array includes a plurality of columns of RAM cells and a first plurality of bit lines, which are electrically connected to the plurality of columns of RAM cells. The non-volatile memory array includes a plurality of columns of non-volatile memory cells and a second plurality of bit lines, which are electrically connected to a plurality of columns of non-volatile memory cells. The data transfer circuit is electrically connected to the first and second pluralities of bit lines. The data transfer circuit is configured to support direct bidirectional communication between the first and second pluralities of bit lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.