Activated chemical process for enhancing material properties of dielectric films
US7500397B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2008 |
| Grant date | Mar 10, 2009 |
| Priority date | — |
| Expiry date | Jan 31, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for restoring a dielectric constant of a layer of a silicon-containing dielectric material having a first dielectric constant and at least one surface, wherein the first dielectric constant of the layer of silicon-containing dielectric material has increased to a second dielectric constant, the method comprising the steps of: contacting the at least one surface of the layer of silicon-containing dielectric material with a silicon-containing fluid; and exposing the at least one surface of the layer of silicon-containing dielectric material to an energy source selected from the group consisting of: UV radiation, heat, and an electron beam, wherein the layer of silicon-containing dielectric material has a third dielectric constant that is lower than the second dielectric constant after exposing the layer of silicon-containing dielectric material to the energy source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.