Alkoxide compound, thin film-forming material and method for forming thin film
US7501153B2 · kind B2 · utility
6Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2005 |
| Grant date | Mar 10, 2009 |
| Priority date | — |
| Expiry date | Mar 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The alkoxide compound of the present invention is represented by general formula (I) below. The alkoxide compound of the present invention is an iron compound that can be delivered in a liquid state and is easily vaporized due to its high vapor pressure. The compound particularly enables production of thin films with excellent composition controllability, and hence is suitable for producing multi-component thin films by CVD.(In the formula, R1 and R2 each independently represent a hydrogen atom or C1-4 alkyl group, R3 and R4 each represent a C1-4 alkyl group, and A represents a C1-8 alkanediyl group.)
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.